When preparing hierarchical zinc oxide ananostructure, the energy gap measured by PL was equal to (3.26 eV) While the energy gap value was determined by UV-Vis measurements (3.5 to 3.7 eV)
PL measurements are generally more accurate for determining the energy gap, especially for direct bandgap semiconductors, because PL directly measures the recombination of electrons and holes, providing a clear signal corresponding to the bandgap energy.
Various approaches can be employed to determine the energy gap, or bandgap, of semiconductor materials, each with distinct advantages and specific applications. The optimal technique may vary depending on the specific material and the level of precision desired. The two prevalent techniques you specified are UV-Vis (Ultraviolet-Visible) spectroscopy and PL (Photoluminescence) spectroscopy. However, I suggest that you utilise Uv-Vis spectra.
UV-Vis Absorption Spectroscopy quantifies the extent to which light is absorbed at different wavelengths. The energy gap is measured by finding the point at which the absorption edge begins, which signifies the transfer of electrons from the valence band to the conduction band.
Both are precise. However, it depends on what material you used. If you are using direct bandgap materials, PL offer higher precision due to its direct measurement of emitted photons. If you are using indirect bandgap material, Uv-Vis would be better choice. Hope it helps.
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