Hello, everybody ! I've recently started device modeling (AlGaN/GaN HEMT) using Sentaurus TCAD and I'm having difficulty in ID-VD graph. My Current Starts from negative when I apply positive gate bias(Vgs= 1V or 2 V). after some significant voltage say (Vds=0.62V in case of Vgs= 1V and Vds= 1.33V in case of 2V) current starts form +ve axis. What can be possible solutions are there to get the positive current from Vds=0V? what are the possible models required to get this??
The problem you taken about is not clear enough. You have a device HEMT and the manufacturers measured the DC Characteristics which is the average values of hundreds of the same device. Did you measure for your device under modeling and you find the negative values of the current for positive valued of Vgs??????
Please have more details.
Good Luck.
Prof. S> EL-Rabaie
try further reducing the gate voltage and you will see the trend that where it is going. May be the transistor working as depletion type. What happens when you apply a negative gate voltage.
Thanks SungWon Chung Sir.
Yes this can be one possiblity as I have applied Vgs=2V when Vds=0V. so the Drain Current ID is flowing with negative sign (i.e. direction is opposite). To compensate that current I have to apply that minimum amount of Vds so that the Drain Current is start flowing +ve. So, how can I overcome that leakage current??
Thank you so much sir for your valuable feedback. I have manufacturer ID-VD Characteristics but in that experimental Data there is no such type of leakage.
El-Sayed Mahmoud El-Rabaie Sir, I am doing DC simulation of AlGaN GaN HEMT. I am comparing my simulation results to the manufacturer's ID-VD curve. when I am doing simulation for Vgs=2V Initially the ID current starts from negative and and it remains -ve until a sufficient Vds has been applied. why it is happening and how to overcome this problem in simulation.
Regards Adarsh
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