I want to dope silver into p-type silicon but before start of my experiments i wanna know temperature coefficient resistance (TCR) of silver-doped-into-p-type silicon. The formula of finding it is given below picture. Can we find it before experimental work, How? Anyone can help please?
Dear Shah Fahad,
In principle, you can get an estimation of the TCR for silver-doped p-type silicon by using the equation you give. A typical boron concentration for p-type silicon of Na = 1014 cm-3 and a typical silver concentration of NAg = 1015 cm-3 can be considered in this model. Consider also that the model imposed the limitation of NAg > Na becuase of the ln() domain limit. Typical values for the ED - EV energy of silver in p-type silicon vary between 0.25 and 0.34 eV.
The attached Figure shows an example of the magntiud order of the TCR for silver-doped p-type silicon calculated by using the proposed model. The previously mentioned parameters were considered. In general, a TCR between -0.06 and -0.006 are observed for temperatures between 300 (room temperature) and 1000 K.
To get a reasonable theoretical estimation for TCR before experimental work, you should know the exact NAg and Na concentrations.
I hope this information can help you.
Kind regards,
Simón Roa.
Dear Simon Roa,
Thank You so much for your detailed answer. I am trying to figure it out through your valuable suggested way. Thanks once again
Best Regards
SHAH
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