I am using moderated pressure for the synthesis flake appearance is triangular as reported in most of the literature. I have taken RAMAN spectra on as grown copper substrate. But There is no signal. I don't have any idea. In case of Graphene we did RAMAN on as grown copper foil. We are getting very good spectra. Do anyone has any explanation or any idea? What's going on there?
Moreover most of the triangular flakes I found on at the edges of foil on backside. There is nothing on top surface. What can be the possible reasons for this?
If you have any suggestion to get better results. Please let me know. I'll be very grateful to you.
Thanks
Transfer the h-BN from copper subtrates to silicon substrate. Then take it to Raman. For a typical transfer process, follow this procedure. "A direct transfer of layer-area graphene"-Applied Physics Letters 96, 113102 (2010); doi: 10.1063/1.3337091
View online: http://dx.doi.org/10.1063/1.3337091
Transfer the h-BN from copper subtrates to silicon substrate. Then take it to Raman. For a typical transfer process, follow this procedure. "A direct transfer of layer-area graphene"-Applied Physics Letters 96, 113102 (2010); doi: 10.1063/1.3337091
View online: http://dx.doi.org/10.1063/1.3337091
The resulting materials might be an amorphous nature (coke formation). Kindly confirm by XRD also.
I agree with Dr. R. Atchudan. Check the degree of crystallinity of your material.
Hi Mohammad,
the Raman scattering signal from high-quality hBN is actually pretty high, see attached paper. I also think that the crystalline quality may be an issue.
Insulators like hBN can basically take any laser intensity. But again, this statement is only true if you don't have defects that absorb and lead to sample heating. The typical approach is to start from the safe and intensity and then double the intensity in each step. You may lose a flake, though.
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