The incorporation of hydrogen in silicon nitride (Si3N4) derived from SiH4 and NH3 precursors can be as high as 39% in PECVD processes, which effects not only the refractive index and extinction coefficient but also the stress of the layers.

thank you, but i would like to serve this thin layer for sensing hydrogen, how can i detect hydrogen with the variation of refractve index or stress of layer ? if i use this layer like a sensor. thank you again.