Hi;
Sputtering rate can be influenced by various reasons. For example, the surface concentration of the target could be different from inner concentration. Do you do a pre-sputtering before the main coating? Presputtering time is characteristic for different targets. And also the angle between the target and the wafer is changing with process to process, this could also be effective. The process pressure should be stable during the process. On the other hand; the temperature of the sample should be uniform. The first things in my mind are these. I hope these could help to you.
Wish to success.
Yes I have done pre-sputtering and also maintained process pressure very stable during deposition. In my UHV, angles of targets are fixed. With respect to this angle after pre-sputtering studies only I have gone for main studies. If you want more details please go through my published work
Thanks for your response
Could you please tell which material are you sputtering, and in which kind of sputtering gas. this will greatly help in analysing your situation.
K. Sreenivas
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