How to the solve convergence problem with the Q factor in quantum model while using it in GaN HEMT(Silvaco ATLAS) ?

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While trying to do the simulation of the gan hemt on tcad sentaurus, do we need to fit the mobility with the given hall mobility in the experiment ?

do we need to change the GaN material mobility in tcad with the hall mobility in the experimental paper? and do we need to match the sheet charge density too? Is this sheet charge density...

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I am trying to simulation a double channel hemt on Sentaurus TCAD but Transferred Electron 2 model is not working? Can anyone help to understand ?

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I am simulating Id-Vg from Vg -6 to 2 V GaN HEMT on Sentaurus TCAD, Can someone please tell as how to remove the issuedescribed below?

Solution is not converging after gate voltage reaches 1.34 V and Id is 200mA

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I am simulating a GaN HEMT on Sentaurus TCAD, I am facing a error as RHS value is exceeding 1e20. Can someone please tell as how to remove the issue?

min step=1e-3 max step=0.01 minstep=1e-5 increment =1.55 , models is hydrodynamic, math i have tried with default and also blocked and pardiso

01 March 2023 8,320 2 View

I am trying to take a FFT of a transient response ( sin wave) on ATLAS (SILVACVO) but I am not a getting a proper DC offset value?

I am changing the fundamental frequency and the maximum harmonic value and the dc offset is coming different every time. how do I set the accurate parameters?

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How can I calculate AlGaN/GaN HEMT Breakdown Voltage on Silvaco TCAD?

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Rajiv Thakur

Dear Shivansh Awasthi,

Please check if the model parameter values are correctly defined for the material

Iman Chahardah Cherik

quatum models have high dependency to your device dimensions and meshesh. you better to decrease the qfactor steps to solve the convergence problem. you can also use Bohm quantum potential model.