I am going to simulate SiC power diodes using Sentaurus. I used the following code but unfortunately the current in FWD is very low and Current in RVR converges at -250 V.

Can anyone help me with missing model or parameters in the file:

Physics

{thermodynamic

Hydrodynamic( hTemperature )

Fermi

EffectiveIntrinsicDensity(BandGapNarrowing(OldSlotboom) Slotboom noFermi)

Mobility (DopingDependence Enormal eHighFieldsat(CarrierTempDrive) hHighFieldsat(GradQuasiFermi) )

Recombination (SRH(DopingDependence) Auger)

Mobility( DopingDependence HighFieldSaturation NormalElectricField CarrierCarrierScattering )

IncompleteIonization

Aniso (Mobility Poisson Avalanche direction = (0.5 0.5 0))#

}

Thanks in advance.