Hello, I have the following question:

I am patterning on 2D materials such as Al₂O₃, HZO, MoS₂, and Graphene using AZ5214E photoresist, employing both positive tone and image reversal (IR) processes to achieve a negative tone pattern.

When AZ5214E is used in positive tone mode, it works well when developed with a 2.38% TMAH solution and lift-off is performed using actone (or by using a bi-layer with a lift-off resist along with mr-rem 700 solution).

However, when AZ5214E is employed via the IR process, it does not get removed properly on Al₂O₃, HZO, MoS₂, or Graphene.

I understand that this issue arises because the photoactive compound in the photoresist undergoes crosslinking, causing the 2D structure to transform into a 3D matrix with significantly reduced solubility.

Could you please advise on how to effectively remove IR AZ5214E on these materials? Alternatively, if you have any recommendations for other negative tone photoresists, I would appreciate it.

Thank you for your time.