A question of curiosity:
Is there a way to remove a 100 nm-thick SiO2 (grown by thermal oxidation) from a Silicon wafer?
To remove the SiO2, use a simple chemical method, you have to do an immersion of your substrate in diluted 10% HF(48%) solution for 2 minutes.
You may find useful to check the following RG discussion: https://www.researchgate.net/post/KOH_etching_solution_SiO2_above_Si
https://www.researchgate.net/post/Does_the_HF_pre-treatment_for_SiO2_removal_before_the_silicon_wafer_thinning_influence_the_consequent_KOH_wet_etching
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