I deposited GZO with 60W under Argon atmosphere for 30 minutes. The resistivity was in the order of 10^(-1). What I should do if I need the resistivity value in the order of 10^(-4)?
Jignesh G. Hirpara
Think about probable reason behind electronic resistance of the film's nd modify your film according to that....mostly crystalline nature nd grain boundaries are playing role in deciding the resistivity....try to modify some deposition parameter like temperature..to get better conductivity.
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Jürgen Weippert
Was the GZO deposited from a compound target or by cosputtering (aka can you vary the doping degree)? Did you use a dielectric target or did you perform reactive sputtering (oxygen poisonng of targets, inclusion of other substances)? When both of the first points are clear, you can think about structural issues as indicated by Jignesh G. Hirpara such as crystal sizes and misoriented grains.
There's a lot of information missing for us to give an actual helpful answer:
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Divya Alayamany
It is a compound target, a dielectric target. And I use RF sputtering. I will think about the probable reasons as Mr. Jignesh G. Hirpara said.
Thanks for your answers.
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