I need to reliably place Ni-Ti contacts, (or select some superior material if there are any) on a silicon substrate, and form a high quality ohmic contact tolerant of temperatures in excess of 1000C with silicon carbide structures also sputtered onto the silicon.

Would any of you experts out there know any gotchas or important details of the process a newbie should look out for? I am currently considering DC magnetron sputtering of the metal materials and silicon carbide, with a 1000C post bake in nitrogen atmosphere to anneal all the components and reduce their residual stresses / promote recrystallization.

Any brilliant advice would be greatly appreciated!

-Michael

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