Dear Researchers,
We are working in Sapphire substrate based GaN HEMT for thermal optimization using Silvaco ATLAS TCAD.
we tried to extract all device parameters and we got it properly except breakdown characteristics simulation.
We have tried all breakdown model for breakdown characteristics simulation and we got only 3 to 5 V breakdown for the below mentioned lattice temperature.
Is it correct?
thermcontact num=1 y.min=-20 y.max=-20 ext.temp=300 alpha=5000
Is there any breakdown characteristics simulation available for thermal optimization technique?
Expecting good response from experts in this relevant field.
Dear sir,
I have designed a structure using sapphire as a subtsrate and now I want to replace sapphire substrate with Sic semi insulator what material parameters should I add for Sic in the simulation. Can you please guide me with this. Thanks in advance
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