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Our research group started working on InGaN channels, composite channels, and dual channel-based nitride HEMTs. Any one reported ScAlN/InGaN heterostructure electrical properties?
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Dear researchers, will you please help me to find the switching frequency of GaN-HEMT (for high power applications) using Silvaco ATLAS TCAD?
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We are struggling for gate leakage current simulation of MOS-HEMT using different barriers/oxide layers, can anybody guide us with sample Silvaco TCAD script for leakage models?
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