Hello Sir....
I just started working in Resistive RAM using high-k dielectric materials. I am trying to model the resistive switching behavior of high-k dielectrics in Silvaco and Sentaurus both. I have applied all the available models for tunneling, recombination and trapping in both software but the current is very low (almost in order of 10-20A).
Please suggest me anything if you have worked at these software that can we model oxygen vacancies in material files? or can we model redox reaction? How i can change the model parameters of a material? or how can i improve this current mentioned above using conventional models?
Please suggest...
Thank You