I am using Si(111) substrate .
Can somebody please explain me how can I find high symmetry direction in my sample?
Thank you
Are you asking for Si (or related directions in plane like )?
If your MBE material is crystalline you simply need to scan this, e.g. by EBSD (electron backscatter diffraction). Either is it single crystalline or poly crystalline. In both cases you either see the directions immediately (or can derive it)...or you see the symmetry distribution of poles which follows statistically the symmetry of the substrate. If crystals are roughly visible also they can be used to conclude the symmetry. In case of rough surfaces you can also use "reflections figures" which have been used many decades ago to evaluate etches surfaces.
If no topography exist at all, diffraction techniques like EBSD are the preferred choice.
(111) plane of substrate at MBE growth means that the axis growth is [111] - this is clearly!
@ E.M. Sheregii: from my point of view V. Singh is not asking for the growing direction...
"...how can I find high symmetry direction in my sample?"
From this part I assume that he is looking for some other directions, or am I wrong?
Gamma is the center of the Brillouin zone. What do you mean by Gamma direction? What symmetry group does your MBE film have?
In case of cubic symmetry of crystal (diamond or zinc blend) the directions Δ or [100] to point X and Σ or [111] to point L in Brillouin zone (B.z.), are usually important. Point Γ is in center of the B.z. so, it is difficult to tell about direction Γ. If you know that at a MBE growth a substrate surface have the (001) plane that means the [001] growth direction and you can find another directions in obtained layer.
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