I want to etching or patterning for bilayer channel layer of transistor consist of SnO2/ZnO on ZrO2 dielectric layer
Generally, I thought that above process would proceed by HCl etchant
But I think that using HCl etchant remove both SnO2/ZnO and ZrO2
Do you know how to etch metal-oxide channel layer without metal-oxide dielectric layer?
Sorry to say, lift-off process wasn't helpful since I mainly proceeded by sol-gel process