The CVD MoS2 growth experiment faces low repeatability. Even through the growth parameters are kept the same every time, the growth results turn out to be very different. At most times, it fails to achieve MoS2 triangle crystals, and only black and thick materials are formed on the SiO2 surface instead. So, which factor leads to this result? the O2 leakage into the growth chamber?
Jürgen Weippert
Well, if you have significant O2 leakage, that would of course be a major factor. In general finding good growth conditions is the less hard thing when doing CVD (or any other gas-phase-based coating technology), finding the proper chamber conditioning routine is usually the hardest part of all your work.
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