Dear All,
in simulating the AlGaN/GaN based MOSHEMT structure, we have to use the surface states concentration/ Surface traps concentration for Fermi level pinning. how to determine the exact concentration of surface traps to be used for Fermi-level pinning at Oxide/AlGaN or Oxide/GaN interface.
Hi
To our understanding, one should introduce fixed charge rather than traps at the semiconductor/dielectric interface. Under the Schottky gate, the metal to semiconductor barrier height pins the Fermi level. See our publications: Nasser, Caram, et al. "Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment." IEEE Transactions on Electron Devices 66.5 (2019): 2146-2150. Ber, E., B. Osman, and D. Ritter. "Measurement of the Variable Surface Charge Concentration in Gallium Nitride and Implications on Device Modeling and Physics." IEEE Transactions on Electron Devices 66.5 (2019): 2100-2105.
Best luck
Thank you for your response, Mr. Dan Ritter Sir. i will see the aformentioned paper.
- Badges
- Science topic
- Similar topics
- Mathematical Sciences
- Graphs