that makes a big difference. On silicon you can baically use thick film solvents. on glass you would need to thoroughly clean it beforehand. Not only with acetone, but with plasma treatment or Piranha. Then immediately proceed like silicon.
The solvent can be fired off by annealing in a first step at 200 °C and the go up to 450 °C for a couple of hrs. Make shure to use the right annealing gas, as SnO2 is easily converted ino SnO if no O2 is present. Also the glass may not withstand the temperature. So, use fused silica instead.
Try this
C 1. F. Haase, T. Doll, M. Fischer, K-H. Drue, Fabrication Technology of Membrane Gas Sensors using Thick Film Metal Oxide Composites, Sensor 03 Proceedings, Nuremberg, 2003
Please note: You will not be dissolving SnO2, but make a viscous paste.
a) try 5,13 g SnO2 in 4 ml Ethylene Glycole
b) also worth to try: use 3,25 g SnO2 in 7,5 ml Photo resist (e.g. AR-p 351 from Allresist or equivalent AZ-resist), you can do photostructuring but need to anneal at least at 550 °Cfor several hours.
O2 or lab atmosphere anneling helps to restore the oxygen vacancy distribution that makes SnO2 semiconducting.
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