The process of coating particles with Graphene Oxide (GO), such as Si or SiO particles, generally comprises dispersing the particles in a compatible solvent, combining them with a GO dispersion, and then using an appropriate coating method. Here is the method to do the task:
Particle Dispersion: Achieve the dispersion of particles, such as Si or SiO, inside a solvent such as DMF or deionised water (DI water). This facilitates the attainment of a consistent covering.
Graphene Oxide Dispersion: Create a solution of graphene oxide in a suitable solvent. This may be accomplished by dispersing graphene oxide (GO) in deionised (DI) water or other compatible solvents using either sonication or stirring.
Coating Process: Combine the particle dispersion with the GO dispersion and use an appropriate coating method. Various techniques, such as spin coating, dip coating, or spray coating, may be used based on the specific application and the required thickness of the coating.
Drying: Following the application of the coating, the solvent must be eliminated. These drying procedures, including air drying, vacuum drying, and thermal annealing, may be used to achieve the required characteristics of the solvent.
With an optimized growth mechanism, it's feasible to synthesize Graphene Oxide (GO) on Si or SiO wafers. I recommend exploring suitable binders for your precursor using Hummer's method, then employing a chemical vapor technique or its variants to grow them on your substrate.