We have tried to bond our ruthenium target with copper baking plate using Indium but it didn't work. We are looking for suitable options. The indium is only sticking to the copper plate not with the ruthenium target.
Ruthenium is covered by a ruthenium oxide film. Soldering is hindered. A trial is to clean the back side of the target using abrasive paper and then using a small amount of colophony as a flux additive. If this does not work you need a stronger acid or salt than colophony. But this is critical.
you may try to use a conducting silver or nickel paste - after a smooth heating to about 50-80 °C, the volatile components of the paste usually are evaporated. Although this connection is not as mechanically stable as a soldering, we made quite good experience with it for vairous different metal targets. Good luck, Dirk
The following link may be useful https://patents.google.com/patent/US6073830A/en
Thank you everyone for your response. I found the suggestion given by Dietmar Hirsch helpful.
I have one more question regarding the position of the sputter source. In our system it is upside down. I am using about 28 W power with 2.2*10^-2 to initiate plasma. Is this possition is good to do sputtering or should i put the source in the bottom flange?
Hello,
in microelectronics the sputter machines have the sputter targets at the bottom. The reason is the production of micrometer particles which occurs on the target surfaces. If the targets are at the bottom the particles don't fall on the wafers (samples). I would always do so if no other reasons exist.
28 W is low. Which target diameter do you use?
Hello,
Thank you for your response. Dietmar Hirsch
The target size is 33mm D. Someone has done before with 30W for 45 mins to deposit 75 nm film.
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