In the fabrication of vofet, is the volume of charge carrier will get affected as the thickness of active layer increase and thus give effect to the output current density?
Well Adilah ,
the Vgs vs J (current density ) seems to close to non-organic FET.
Its dependency on channel length and thickness (W/L). With organic the mobility factor < regular FETs. It should be compensated in the width since the J depends on surface area where they are injected .
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201504377/full
Dear Adilah,
Increasing the thicness of the active layer will cause an increase in the channel resistance between the source and drain and thereby it decreases the on- current of the device. It is so that the current in the on state between the drain and source will be limited by the space charge limited current mechanism in which the the drain current will be inversely proportional to cubic of the distance between the source and drain.
The thesis in the given link introduces a detailed study of all the dimentions of the transistor on its i-v characteristics:http://omd.one/PapersAndPatents_Files/Ariel%20Ben-Sasson.pdf
Best wishes
What exactly happens depends very much on your transistor geometry, keeping in mind that there are several different designs around which all work slightly differently (see attached review). In case you are working with the same design as I did (see section "VOFET" in attached review), you might find chapter 6 of my thesis helpful (see attached link to qucosa).
http://tud.qucosa.de/fileadmin/data/qucosa/documents/20773/Diss_AAG_pdfa.pdf
Article Vertical organic transistors
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