I have performed XPS of SiC sample doped with N. I have intentionally introduced defects into SiC lattice. I have taken the XPS spectra before and after treatment. Both the spectra is calibrated to the standard gold (84.0 eV).

In the before treatment spectra, I see SiC binding energy (B.E) state at 101 eV (in Si 2p) and 283.5 eV (in C 1s), but in the after treatment spectra I see SiC B.E state at 101.5 eV in (Si 2p) and 284.0 eV (in C 1s). It can be noted that the difference in B.E between Si 2p and C 1s spectra is 182.5 eV, which is same in the before and after treatment. I have following doubts or questions:

1. Is this a "true" chemical shift or is it due to surface charging effect or something else?

2. Does surface charging always shifts B.E to higher scale irrespective of elements present in the compound?

3. How much of a "maximum chemical shift" in B.E can be expected in the wide band gap or insulating materials?

Thanks.

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