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Questions related from Indudhar Panduranga Vali
Neutron transmutation doping (NTD) has been reported for silicon. But I unable to find Raman studies of the heavily doped silicon by NTD. Please share the link if there exist any?
07 August 2019 5,896 1 View
I have performed XPS of SiC sample doped with N. I have intentionally introduced defects into SiC lattice. I have taken the XPS spectra before and after treatment. Both the spectra is calibrated...
05 April 2018 9,654 4 View
I would like to understand following terms which we frequently notice in papers of silicon carbide like zero phonon line and its phonon replicas, how they are assigned and what is their importance...
22 February 2018 2,182 7 View
It is noticed repeatedly that, the Al/n-SiC contacts are exhibiting both p- and n-type Schottky barriers even though the contacts are prepared under the same conditions. Why is it happening? How...
24 November 2017 4,738 4 View
Please elaborate the concept of radiolytic defect production with respect to irradiation on materials.
27 October 2017 9,325 4 View
I have done irradiation on SiC and noticed uniform tensile strain from XRD. How does this irradiation induced strain could influence Schottky junction properties? Thanks.
05 June 2017 2,993 4 View
How to confirm surface band bending from UPS?Any detailed or relevant article regarding surface band bending studied from XPS and/or UPS is needed. Thanks.
22 April 2017 6,769 2 View
I'm a beginner. Please let me know any textbook or journal where a detailed interpretation of the valence band (VB) spectra of a semiconductor and consequences was discussed.Comparative studies...
21 January 2017 447 5 View
I'm a beginner, I would like to know about the evaluation of the surface density of states when the dopant concentration is known and/or unknown.
19 December 2016 8,274 3 View
In case of fabricating the Metal-semiconductor contacts, we use the concepts of electron affinity and work function, where, we are normally interested in the work function of a metal and electron...
12 October 2016 6,511 7 View
I have an intensity and 2θ data (10-80 degree) for n-type SiC which is having hexagonal structure. The sin2 θ values for first and second peaks are 0.098 and 0.422. I’m unable to see the standard...
11 April 2016 9,873 5 View
Dear experts, Since wafers, for example, Si may have 100 or 111 or other orientation. Is it proper to cut such particularly oriented wafers using normal glass cutter? Is there any impact on the...
30 March 2016 7,851 6 View
