Hello. I wonder how can the monocrystalline silicon be grown on a SiO2 substrate? Normally, polysilicon is supposed to grow on SiO2 substrates due to crystal lattice mismatch but apparently the process of growing monocrystalline silicon on an insulator is used in industry.
As far as I know, in industry they don't grow single-crystalline Si on SiO2 (not because of lattice mismatch but because SiO2 is amorphous and not favorable for epitaxy). Instead, they bond 2 different wafers and make one of them as thin as nm-scale (see attached image).
The other method is to use ion implantation to create a buried SiO2 layer (https://en.wikipedia.org/wiki/Silicon_on_insulator).
For the synthesis, in future might expect from remote epitaxy technique:
https://www.nature.com/articles/s43586-022-00122-w
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