The depletion region formed around any pn junction depends on the following parameters:
- The doping concentration on both sides, if the doping in one side is high then the doping of the lightly side controls the width of the depletion region.
- The second factor is the overall potential difference on the depletion region:
It can be given by the overall potential difference pd= phi- V,
where phi is the built in potential and V is the forward bias voltage.
So in order to increase the depletion region width:
lower the doping concentration of the lower doped side
reverse bias the junction.
For the exact relationship please refer to the link: Book Electronic Devices