As far as I know, annealing is good for IGZO TFT performance.

I used Rapid Thermal Processing (RTP) to anneal IGZO TFT at 450℃ for 30 seconds. However, after RTP annealing, the IGZO is metal-like, without semiconductor performance. The gate voltage cannot control the drain currents that keep at several μA.

Is there any explaination about this results?

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