I am trying to fabricate a TFT with back gate structure.
After depositing and patterning TiN back gate structure, a HfO2 film was deposited by ALD. The next step is etching the HfO2 and patterning it.
Could you please give me some suggestions about how to pattern the HfO2 film without etching the TiN.
Other suggestions are also appreciated, if you have experience about the selectively etching HfO2 film with other metal materials.