Usually one major advantage of pulsed laser deposition (PLD) is its ability to achieve desirable film composition. However I was reading the silicon VLSI technology Fundamentals, Practice and Modeling book, which mentions that evaporation is usually not good in retaining target composition because evaporation rate is heavily materials based plus the source materials are usually molten or near molten. As to PLD, it's really, in my opinion, a variation of common evaporation, using pulsed laser as the energy source, which is similar to e-beam evaporation. Could anyone provide any insights on this topic?
To make uniform Thin film deposition as the Target composition, may be considered the following steps:
i) Prepared the Mono-target with the composite as the desired film composition,
ii) Target requires to rotate with uniform speed such that the uniform sputtering of ions from the target,
iii) The operating pressure should be maintained uniformly during the deposition, such that the ions, ejecting from the target, should incident on the substrate without deviation and bouncing from the surface of the target.
iv) Ultrathin deposition of the composite materials may be avoided.
v) Optimize the pulse LASER beam energy based on the composition of deposited thin film using the compositional analysis of deposited film with variation of LASER beam energy.
Though there are composition issues but some materials can not deposit by other methods, though comparisons are available in literature
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