This is a new technique for me so am having problems with the data interpretation.Am looking for some good literature sources that can be of help to me or just any general information concerning this technique.
Secondly,am trying to use the Keithley 6487 together with the probe station for I-V measurement,The semiconductor parameter analyzer that we normally use has broken down.How do i go about making the connections and acquire the measurement data?
The C-V characteristic is used to characterize the junction of the solar cell in case of reverse bias. This is because in case of reverse bias the capacitance is termed the junction capacitance or the depletion layer capacitance. This is assuming p-n junction solar cells. In case of pin solar cell structure the field region makes out the whole i-layer.
In order to understand the solar cell capacitance as a function of the voltage you have to master the the p-n junction and p-n junction diode theory.
So, the references brought by Arnulf are okay. However, there is simpler textbooks explaining the diode capacitance in easy to understand way.
Please see for example:Book Electronic Devices
The paper in the link gives full details about the capacitance of heterojunctions and how could be used to characterize the junctions:Article Capacitance and conductance of ZnxCd1-xS/ZnTe heterojunctions
Best wishes
Here are some fundamental literature references:
Hilibrand, J. & Gold, R.D. (1960). Determination of impurity distribution in junction diodes from capacitance-voltage measurements. RCA Review, 21, 245-52, RCA Laboratories, Princeton, NJ, June 1960, 0033-6831
Sze, S.M. & Ng, Kwok K. (2007). Physics of Semiconductor Devices, third ed., Wiley, 978-0-47 1-1 4323-9, New York http://www.eet.bme.hu/~poppe/miel/2015/en/Physics_of_Semiconductor_Devices-S_M_Sze.pdf
Maybe this links are helpful as well:
http://www.scientific-devices.com.au/pdfs/WeTransfer-NZvJB6Cw/Capacitance/Fundamentals%20of%20CV%20Measurement.pdf
download.tek.com/document/CV%20MeasTips%20WP.pdf
The C-V characteristic is used to characterize the junction of the solar cell in case of reverse bias. This is because in case of reverse bias the capacitance is termed the junction capacitance or the depletion layer capacitance. This is assuming p-n junction solar cells. In case of pin solar cell structure the field region makes out the whole i-layer.
In order to understand the solar cell capacitance as a function of the voltage you have to master the the p-n junction and p-n junction diode theory.
So, the references brought by Arnulf are okay. However, there is simpler textbooks explaining the diode capacitance in easy to understand way.
Please see for example:Book Electronic Devices
The paper in the link gives full details about the capacitance of heterojunctions and how could be used to characterize the junctions:Article Capacitance and conductance of ZnxCd1-xS/ZnTe heterojunctions
Best wishes
Arnulf Jager-Waldau and professor Abdelhalim Zekry thank you very much for your valuable information.I really appreciate.In case i have further questions i will not hesitate to contact you.
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