Raman spectroscopy is a very powerful method, provided that you have calibration curves. Without such curves, you can just observe peak shifts or broadening but quantitative information is not directly available.
Raman selection rules reflect the crystal symmetry of the materials being investigated. Polarized Raman scattering combined with Raman selection rules could be used to identify the crystal symmetry for the case when samples are single crystals. If not a single crystal, then you will see line broadening due to reduced symmetry and relaxation of the Raman selection rules. Stress and strains are seen as shift in the peak position, with compressive stress creating an upward shift in frequency.
Size of the crystal can be calculated from changes in peak shape and peak position of nanocrystals compare with single crystal and known phonons dispersion curve. Stress and strain also will induce shift of the Raman bands. Magnitude and direction of the shift will depend on crystal symmetry. Summary of stress-strain in semiconductors by Raman spectroscopy was published by European Commission ("Raman and Luminescence spectroscopy fro microelectronics", project "Nostardamus" project SMT4-CT-95-2024).