I have raman spectum of 4H-SiC implanted with Ni ions. There is formation of QD like structures which I presume is due to the strain in the lattice when the implantation was done. So how can I calculate the strain using the implanted and the prestine spectrum
Check these articles
http://cdn.intechopen.com/pdfs/38539/InTech-Stress_measurements_in_si_and_sige_by_liquid_immersion_raman_spectroscopy.pdf
http://arxiv.org/ftp/arxiv/papers/1207/1207.0781.pdf
Dear Ashraf Al,
Raman is a very sensitive technique and is very useful to determine the strain. Having in consideration your type of samples, the shift in the Raman peaks can be caused by strain and also by composition.
You can find the 'translation' of the Raman shift experimentally or by calculating it. Experimentally you can obtain it by measuring it by XRD. With the results of XRD of some sample you can make a fit and find the results for new samples.
By calculation you can use the articles provide by Sujoy Sarkar in a previews answer. However it is always convenient some XRD results to validate the calculation results.
The peak shifting of Raman indicates the strain produced in the samples.
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