Generally, when metal comes into contact with semiconductor, there would be forming schottky barrier at the interface. And at the interface, there exists a depletion region where there is no mobile charge. What i want to know how to determine the interface potential with position in experiment? Anybody can suggest that? Thanks.
Dear Shi-Jun,
What do you mean that you want to measure the interface potential with position. It is so that the contact difference of potential between two materials is by the initiation the work function difference of the two materials.
So, irrespective of the the distance between them the contact difference of potential remains the same!. You may mean that you want to determine the potential among the the transition region between the two materials under equilibrium?
wish you success
Hi Abdelhalim,
Yes, i want to know how to measure the electrostatic potential at the interface with respect to position along the cross-plane direction of two contact materials.
Dear Shi-Jun,
Welcome,
well,
My experience is for measuring the potential distribution in the pn junctions of power devices under biasing. At that time two methods are used: the beveling and probing the surface of the bevel by a very fine metallic probe made from tungsten needle and the other method is using liquid crystals whose color or gray level changes with the electric field strength. The beveled surface is coated by the liquid crystal and the color is observed by a microscope The second method may be suitable for your application. For more information please see the paper in the link: .http://www.sciencedirect.com/science/article/pii/S0026271414000109
wish you success
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