One of the main reactions considered to produce silicon nitride compound is the chemical reaction of silane and ammonia gases as follows
3SiH4 + 4NH3 = Si3N4 + 24H2
When these precursors are used in gas form, then this reaction may require some specific conditions to occur normally. If the required energy is supplied from an external source, then this reaction may occur with much more probability.
My question is: how can the chemical reaction of silane and ammonia be induced to produce silicon nitride?
Dear Dr. Oday Hammadi ,
I suggest you to have a look at the following, interesting papers:
-Reactions in silicon–nitrogen plasma
Goran Kovačević and Branko Pivac
Phys. Chem. Chem. Phys., 19, 3826-3836 (2017)
Available at: https://pubs.rsc.org/en/content/articlehtml/2017/cp/c6cp05395e
or on RG at: https://www.researchgate.net/publication/311866196_Reactions_in_silicon-nitrogen_plasma
-Review—Silicon Nitride and Silicon Nitride-Rich Thin FilmTechnologies: Trends in Deposition Techniques and Related Applications
Alain E. Kaloyeros, Fernando A. Jovè, Jonathan Goff, and Barry Arkles
ECS Journal of Solid State Science and Technology, 6 (10) P691-P714 (2017)
Available at: https://iopscience.iop.org/article/10.1149/2.0011710jss/pdf
-Chemical Vapour Precipitation of Silicon Nitride Powders in a Laser Reactor
R. A. Bauer, F. E. Kruis, P. van der Put, B. Scarlett and J. Schoonman
KONA, No.8, 145-154 (1990)
Available at: https://www.jstage.jst.go.jp/article/kona/8/0/8_1990022/_pdf
Enjoy reading and my best regards, Pierluigi Traverso.
Yes the reacn rate for formation of Si3N4 can be expressed as transition state theory .More probable means change of entropy of transition state is positive with a negative Gibb's free energy change ie spontaneity of the formation of Silicon Nitride .The specific reaction rate K# = exp ( -delG# / RT ) = exp ( - DelH # / RT + DelS# / RT ). When ever external source of heat energy ie enthalpy is supplied the probability of collision between the reactants makes the reaction more feasible .
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