I electrodeposited Ni into patterned Si. I used Ti+Au for making adhesion and electrical conductivity for electordeposition. I need to separate my Ni from the patterned Si. The patterns features are in order of 20nm-40nm and the whole patterned area is ~1cm by ~1cm.
You may be interested in the following question, as some of its answers are relevant to your case (assuming it is only Ni on Si):
https://www.researchgate.net/post/How_can_I_remove_nickel_plated_layer
Assuming that you do not want to hurt either Si or Ti/Au, I would recommend using sulphuric acid or dilute nitric acid, as neither can dissolve Au and Ti (as per: https://www.azom.com/article.aspx?ArticleID=1240). While I don't expect concentrated nitric acid to be able to harm silicon too significantly at room temperature (as opposed to elevated temperature, as per: aip.scitation.org/doi/full/10.1063/1.1804255), using dilute HNO3 would provide a better safety margin against "producing" silica.
Dear Tomasz,
Thanks for the response.
I don't care about the Ti+Au layer even if it dissolves completely, but I definitely care about the patterned Si (because it costs us alot to be prepared) and the plated Ni which is our ultimate goal.
I will go through the paper, and I will come back to you if I still needed help.
You may consider etching the nickel film over the silicon substrate, with conc. HNO3 + H2O (3:7 v/v) at room temperature, what may take approx. 1 min; or by using less conc. HNO3 with added NH4NO3 (or slowly added ammonia, citric acid, or EDTA).
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