Dear Jitesh Pandya ,

There are two main reasons for such behavior of your device!

- The first cause may be due to damaging your device by too high constant voltage source!.

In order to test diodes it is required to test the diode with constant current source

rather than consatnt voltage source.

If you use a voltage source then you have to limit the current in the diode by a proper series resistance with the diode!

- The other less probable cause is device instability because of the moisture and oxygen effect on the perovskite material.

This can be overcome by a test environment free of moisture and oxygen.

Please if you made investigations please report to us!

Best wishes

Dear Jitesh Pandya

Given that ion migration is the main reason for device degradation, suppressing ion migration has become the main strategy to improve the operational stability. According to the pathways of ion migration, there are three categories: suppressing bulk ion migration, suppressing grain boundary ion migration and suppressing interlayer ion migration. The first two strategies tackle ion migration inside the perovskite film, while the third one tackles ion migration across the interface. It should be noted that the electrochemical reactions can also be suppressed by suppressing ion migration inside perovskite, and the interfacial reactions can be eliminated by incorporating ion blocking layers that are used to suppress interlayer ion migration.

Hope this helps

Regards