I would go for Hall resistivity to get the mobile carrier density and character.

As for the "effective valence density of states" I am not sure to understand what exactly is the piece of information you would like to obtain. In case it were the (binding) energy resolved density of states, then XPS could be an appropriate probe of that quantity. It should, however, be interpreted with the guidance of an experienced/skilled scientist, preferably with expertise on the material class you're dealing with. (It is readily possible to draw nonsense conclusions from experimental XPS datasets if one is not aware of the pitfalls which accompany this otherwise great technique.)

Here we can obtain information about the effective density of states in the conduction and valence band for CZTS.

Interesting (because that is not what I associate with 'density of states' and because this is not the type of science I normally deal with). Prashant, are these the pieces of information you were looking for?

This attached paper does not contain any kind of information about how to find the carrier concentration and density of majority charge carriers in the semiconductor. I , hearty appreciate your effort sir Yuriy Gnatenko. Yes you right, Kai Fauth , It was not the right information. I guess there is some specific method for finding this quantity. For e.g. hot probe method or hall effect. But i am not sure and steel not able to find this quantity.

Prashant, understand "carrier density", but I am still not sure to understand what you are looking for when you say "effective valence density of states".

[and I didn't say Yuriy's hint was 'wrong' but it did not address what *I* associate with DOS.]

I have read one formula ie carrier concentration = Nv exp (A-TEP/Kb). Now its ok? I want to ask you what is Nv in this formula?

Maybe you point me/us to the sourceof that formula or attach it with better readability to your message.

But it looks like the number density of thermally excited carriers. The exponential activation term contains the ratio of binding energy of acceptor (or donor) states and thermal energy (k_B * T, so I am missing the temperature in your formula). Nv then should then be the number density of the dopant sites. There remains one term (in the exponential expression) which is not accounted for, but I ignore the real meanings of 'A' and 'TEP'.

And the issue of "effective density of states" is still unclear to me.

sorry, I did not read your previous answer with sufficient care. The majority carrier density is something I consider very different than 'density of states'.

The canonical meanings of "density of states' are twofold:

(i) number of electronic states per unit volume in reciprocal space. In crystals this is a constant.

(ii) number of electronic states per (infinitesimal) interval of energy. This is a function of energy. For example, this density of states, taken at the Fermi level, is finite in metals but zero in semiconductors and insulators.

Kai, I also do not quite understand the question. But I proposed variant of answer to feel the reaction of the author question. Name of paper close to the second part of question Kai, thank you for your helping. Now I understand that the author of this question can not articulate question enough correctly.

I fully agree with Kai, that "carrier density" and "density of states" have different physical meaning. It is evident.