How can I do passivation of CVD GFET devices fabricated using photolithography(LOR-3B and S1813 photoresist)?

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Kunpeng Jia

Hi Dawuth,

Isolate layer may be necessary to avoid the effect of PR residue.

After decive fabrication, PECVD SiNx is perfect choice to passivate and N-type dope graphene.

Dawuth Pathan

@Kunpeng Jia

Could you tell me any reference material for the method you have suggested?

For the SiNx method,

http://www.sciencedirect.com/science/article/pii/S0169433214008721

FYI

There are other reference you can find from internet...

Thanks kunpeng jia