I am using multistage UV-LIGA process for fabrication of MEMS switches. PVA Tepla microwave plasma asher is used for removing SU-8 mould. The required switching action is governed by metal layer and nickel structure. But after plasma ashing, the stubborn residue is seriously affecting the conductivity of exposed metal layer. Is there any method available to completely remove residue of SU8?
Which kind of gas do you use during your plasma cleaning process in TePla to remove SU-8?! Did you try a mixture of O2 with a Fluor gaz, as CF4 in your TePla plasma?!
Parastesh has a good idea. O2/CF4 is good for etching polymers. I'd recommend starting with a mix that is mostly O2. SU-8 is very stubborn. If the residue is thin enough, you might try removing it with a mild argon plasma. Be very careful, though, as this will also etch your metals and any other exposed surfaces.
Thanks Parastesh and Joseph
We are using blend of O2 and CF4 to expedite the ashinh process... The fluorides are somehow hardening the residue further and we are unable to get rid of it even after prolonged ashing cycle
Hi Jaising,
In this case, avoid plasma. Your only chance without affecting metal layers is to use a WET polymer removal.
Regards
Mohamed
Hi Mohamed
Thanks for reply.. Can you please elaborate on wet chemistry you are suggesting?
Hi Jaising,
You can for instance use the EKC505 product from DuPont or another one from EKC5xx serie.
Regards
Mohamed
Hi Jaising,
You can for instance use the EKC505 product from DuPont or another one from EKC5xx serie.
Regards
Mohamed
Hi Jaising,
Mohamed suggestion's sounds very good to me too! I can suggest you to try Piranha solution as wet etching also! Good luck,
Regards
Parastesh
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