In " Physics of semiconductor Devices" by Sze & Kwok pge 218 equation (Eq 43) says that Cit = q^2 Dit. But in E.H.Nicollian and J.R.Brews, 'MOS Physics and Technology", Wiley Classics Library edition, (2003) (equation 8.13) it is given as Cit = q Dit.

Where Dit is the interface trap density and Cit is the interface trap capacitance of an MOS capacitor. q is electronic charge.

Which of these two is correct?

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