I currently clean the SiO2 substrate with Piranha solution for 1-2 hours. I've also used Cr and Ti as the adhesive layer and neither have worked. Both samples create thin films that can easily be scratched off and I'm trying to use my thin films in electrochemical measurements so they need to last. The current running theory is that the sputtering instrument is too old to produce the clean, low-pressure environment that we need to prevent oxides from forming. Ag was suggested as the adhesive layer because it possibly resists oxide formation better than either Cr or Ti.
Thanks for your help,
Elle
I only know the case when using TiOx as adhesive layer : it works very well for elaboration of Pt/TiOx/SiO2/Si. But performing good adhesion of the platinum layer is very depending on the growth conditions of the TiOx layer (there are a lot of publication on this topic).
So, You should give more details on the deposition condition you have been using (in particular substrate temperature, thickness of the adhesive layer and O/Ar gas ratio during sputtering) and also you should indicate what kind of thin film you want to get adhesive on SiO2.
Dear Eleanor A Campbell ,
what kind of thin films you need to prepare on the SiO2 ? if you want to clean the substrate i suggest to use few drops of Hydrofluoric acid (HF) it is very effective in the process of cleaning.
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