Eventhough LPCVD SiN is etched by KOH in a very less amount, whenever a long duration(~5 hour) 30% KOH ethcing is done, SiN also gets affected. Is there any methods to prevent it?
What are the alternatives and options.
Aaron Windsor
I have never tried it, but ProTEK® PSB coating is an alternative. Are you using stoichiometric or low-stress silicon nitride?
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Aaron Windsor
These are both LPCVD processes. Low stress nitride uses predominately DCS (5.7:1) to NH3. I tend to used Low-Stress Nitride for my KOH work.
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Anuj Singhal
Protek PSB failed in my process - if etching >100 um.
I used low stress LPCVD nitride. Works wonders.
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