Hi, i am working on Graphene field effect transistor. As commonly proposed in literature that there exist strong fermi level pinning across interface of Graphene/Si interface which degrade electrical properties of graphene. To overcome this situation, the interface should be very clean. Could anyone suggest me the best residue remover for graphene cleaning by maintaining its electrical properties rather than annealing.
No. Is it Ok to use HCL treatment ? Does it damage surface uniformity doing any kind of reaction with graphene ?
in my case no. Actually, I made GO and wash it with HCl solution for remove the impurity and wash again with distilled water until pH 6-7. and when I read many people usually use HCl for removing some impurity like sulfur or Mangan at graphene chain
actually its kind of PMMA residue which reside there during spin coating of photoresist . so many reports say that we can not get residue free surface. a small quantitiy of PMMA residue is always there.
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