Hello, honorable researchers, I need your expertise advice. For GFET, at zero gate voltage, if positive voltage is applied across drain and source, what would play vital role as majority charge carrier: electrons or holes?
Hi,that is really a interesting question.i would say half half in the idea situation.no matter postive or negativ Uds,there is no reasons for which of these two could be majority by 0 doping graphene at 0 V Ugs.but for p doped graphene ,which is much more common ,the majority should be holes at 0V.