I'm wondering to know the easiest method to calculate the ideality factor for my perovskite semiconductor . I've seen couple of paper using light intensity Vs Voc to estimate the ideality factor . Anyone can elaborate the easiest method ?
the ideality factor n characterizes the recombination processes in the space charge area of a diode. If n > 1, then a part of generated electron hole pairs recombines almost within the space charge area and is lost for energy recovery.
Therefore, the measurement of a diode dark characteristic almost gives sufficient information. Nevertheless, illumination can saturate parasitic recombination centers and then the diode works well. If almost in darkness the ideality factor lies near 1 you have a proper diode. If n lies near 2, I would continue the investigations as a function of increasing illumination. From interest is that current where you get a linear relationship between intensity and photocurrent. Then, it is your decision whether you can use the diode or not.
I attache a publication where the different methods are described.