Hi.
Currently i'm working on a project to growth ZnO nanowires on Sapphire substrate (Au 2 nm layer as seeds) by using CVD.
I read many papers about it and i'm try to apply these experimental conditions on my system with no success.
I have a 3 zone furnace, I using UHP Nitrogen as a carrier gas, Vaccume pump (in range of 7-1000 mbar) and mixtur of ZnO and Graphite powder (1:1).
The significant parameter for my knowledge is the Temperature of the powder and the substrate ( end the distance between them), vacuum level and gas flow rate (in sccm unit).
Can anyone recommen his growing setup for the synthsis.
Thanks.
Hello Netanel,
I don't have much experience in ZnO nanowire growth in particular, but I have done a lot of silicon nanowire growth in CVD. These types of systems can be extremely oxygen sensitive. I would check your system for leaks, and see how long you can maintain vacuum while the pump is off. If you have significant drift, then I would suggest trying to find the source of the air, as even small leaks in the system can poison the catalyst. Additionally, it's also important to recognize that the sides of the growth chamber can play a significant role in the process, acting as secondary nucleation sites. Using a fresh and clean vs an old growth chamber can result in drastically different products.
Again, haven't done ZnO nanowire growth, so take this with a grain of salt, but good luck!
Best,
John