Dear Ali Zahid ,
I do not really know what you are aiming at.
If Si is present in your sample (even as substrate) the 28° peak is most likely the 111 reflex of Si. But the 220 and 311 peaks are missing. This is perhaps due to too less crystallites in your sample or preferred orientation of your (Si) substrate (if your substrate is a Si wafer).
Apart from that there is a huge amorphous background.
So please share details about your sample.... and we can discuss further on.
Let me come back to the term 'crystalline characteristics for Si' in your question.
In fact the 28° peak is due to crystalline material. However due to the lack of other Si peaks it makes to my opinion no real sense to calculate any degree of crystallinity.
Thanks in advance and best regards
G. M.
Dear Ali Zahid ,
I do not really know what you are aiming at.
If Si is present in your sample (even as substrate) the 28° peak is most likely the 111 reflex of Si. But the 220 and 311 peaks are missing. This is perhaps due to too less crystallites in your sample or preferred orientation of your (Si) substrate (if your substrate is a Si wafer).
Apart from that there is a huge amorphous background.
So please share details about your sample.... and we can discuss further on.
Let me come back to the term 'crystalline characteristics for Si' in your question.
In fact the 28° peak is due to crystalline material. However due to the lack of other Si peaks it makes to my opinion no real sense to calculate any degree of crystallinity.
Thanks in advance and best regards
G. M.
Hi Ali Zahid
I agree with Prof. Gerhard Martens, details about the sample and its measurements are unknown.
I hope you could give us more details.
Incomplete information shown in the figure, can't predict the crystallinity of Si crystal
you can make use of these books
Device Applications of Silicon Nanocrystals and Nanostructures by Nobuyoshi Koshida
Photovoltaic and Photoactive Materials: Properties, Technology and Applications by Joseph M. Marshall، Doriana Dimova
Houben, L., M. Luysberg, P. Hapke, R. Carius, F. Finger, and H. Wagner. "Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth." Philosophical Magazine A 77, no. 6 (1998): 1447-1460.
The peaks at 28 degree is definitely for Si (111). But the hump you are getting 20-24 degree is due to the glass substrate revealing your Si material is thin film may be micro or nano crystalline. Please let me know what type of Si material is this. if it is micro or nano then I say the crystalline volume fraction of your material is very less. Moreover you'll get more peak of (220) and (311). If you let me inform more I can suggest you for better growth and characteristics.
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