Simple answer: yes.
For the simple reason that dopants and Si will have a different atomic crystal radius.
The more difficult question is: how much will the lattice parameter change. This will depend on several aspects: (1) dopant site (substitutional or interstitial), (2) dopant type (both valance and size play a role), (3) will there be other related defects (vacancies), (4) how will the dopants be distributed (homogeneous or clustering), and last but not least (5) dopant concentration.
Based on ab initio calculations you can already make a first estimate of the effect of the dopants. In case no vacancies are involved, you can even use a Vegard's law approach to estimate experimental expansions based on a few calculations (as I explained in this paper: J. Mater. Chem. A 2(33), 13723-13737 (2014)
doi: 10.1039/C4TA02449D )
Danny
I think this would depend on the level (concentration of the dopant), low levels of doping dont affect on the crystall structure. High levels of doping affect the crystall properties.
Doping do not change the crystal system. But the lattice parameter have some deviation due to the difference in the atomic radii of the dopant with atom of the pure crystal.
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