Dear readers,how can change intrinsic carrier concentration(ni) in silvaco atlas?
I changed NV and NC but it doesn't work.
Dear Danial,
If you change the effective density of states Nv or Nc or Eg, the band gap the intrinsic concentration must change as this is a basic semicondcutor parameter defined by ni^2= NcNv exp (-Eg/ kT),
Then possibly you have to correct your syntax.
For the statements of the material parameters please refer to the atlas manual section 2.7: http://www.eng.buffalo.edu/~wie/silvaco/atlas_user_manual.pdf
Best wishes
Danial:
If you use material silicon Nc 300 Nv 300 and Eg 300 different values than the default values for silicon of these parameters at 300 K, I guess just changing Nc, Nv and Eg might not work as these are fixed values for silicon at 300 K. If you have a new material other than silicon, you should be able to use the command syntax like: region x.min = x.max = y.min =, y.max = user.material = (new material name) and then under model statement material material = (new material name) user.group = semiconductor user.default = silicon Nc300 = Nv300 Eg300 =
Now the new material defined by new material name should replace the default values of Nc300 Nv300 and Eg300 values of Si with new values and accordingly calculate ni for the new material.
Please see Appendix B. material systems, Chapter 21 statements and Chapter 3 Physics of the attached Silvaco manual.
Please recommend my answer if it is useful. A recommendation helps the responder profile in Research Gate.
Sincerely,
Dr. Nabil Shovon Ashraf.
- Badges
- Science topic
- Similar topics
- Physical Sciences
- Materials Science
- Materials
- Semiconductor